Semiconductor Devices: Pioneering Papers

by Simon M. Sze (Editor)

Semiconductor Pioneering Papers makes available an important collection of 141 pioneering papers on semiconductor devices covering a period of 100 years, from the earliest systematic investigation of metal-semiconductor contacts in 1874 to the first observation of the resonant tunneling in 1974. The first papers on all of the major semiconductor devices including the p - n junction, the heterojunction, the bipolar transistor, hot electron transistors, thyristors, the Schottky barrier, the Mott barrier, the JFET, the MESFET, the MOS diode, the charge-coupled device, the MOSFET, the CMOS, the nonvolatile memory, the tunnel diode, the quantum well, superlattice structures, the IMPATT diode, the BARITT diode, the transferred-electron device, the LED, the laser diode, the photodetector and the solar cell are included. Also presented are the classic papers on device physics and characterization such as the generation-recombination theory, the high injection theory, the avalanche breakdown theory, the Fowler-Nordheim tunneling theory, the noise theory, the Debye length concept, the Hall effect, the Early voltage, the Ebers-Moll model, the differential capacitance method, and the lifetime measurement technique.The papers are divided into four bipolar, unipolar, special microwave, and photonic devices, with a commentary for each part to highlight the importance of each of the collected papers. This book serves as a useful reference for a first-hand look at the operational principles of devices as conceived by their inventors and to understand the basic device physics as documented by their discoverers.

1028 pages, Paperback

First published March 28, 1991