Ultrafast Spectroscopy of Mid-Infrared Semiconductors Using the Signal and Idler Beams of a Synchronous Optical Parametric Oscillator

by Richard M. Derbis

The objective to this thesis was to improve the procedure for taking unltrafast, time-resolved measurements of photoluminescence from MWIR semiconductors. Previous work has used mode-locked titanium sapphire ( Saph) laser to excite the semiconductor sample and to upconvert the photoluminescene from the semiconductor. Work completed in this thesis improved on the techniques developed during previous work. A synchronous Optical Parameter Oscillator (OPO) will be used to convert the Saph laser 0.830 micron into 1.3 micron signal and 2.3 micron idler eams. Whereas the Saph reference and signal beams were too energetic to excite the quantum well (QW) layers of certain MWIR opto-electronic semiconductor structures, the synchronous OPO allows investigation of the active layer by directly exciting the QWs. Photoluminescence was detected from an indium arsenide antimonide (InAsSb) sample with a peak wavelength of 3.8 micron. A detailed procedure for setup of the TRPL experiment using the synchronous OPO is provid

58 pages, Paperback

First published October 17, 2012