Properties of Lattice-Matched and Strained Indium Gallium Arsenide

by Pallab Bhattacharya (Editor)

InGaAs, grown on both GaAs and InP, is playing a pivotal role in the study of quantum systems which promise applications in microelectronic and optoelectronic devices. This highly authoritative book concentrates the expertise of 39 leading researchers from the USA, Europe and Japan, structural, thermal, mechanical and vibrational properties; band structure of lattice-matched and strained alloys; transport, surface, optical and electro-optical properties; radiative and non-radiative recombination; epitaxial growth; doping; etching of InGaAs and related heterostructures; photodetectors; FETs; double heterostructure and quantum well lasers.

340 pages, Hardcover

First published October 1, 1993