Strained Layer Epitaxy: Volume 379: Materials, Processing, and Device Applications

by Eugene Fitzgerald (Editor), John C. Bean (Editor), Keh-Yung Cheng (Editor)

An interdisciplinary discussion of key materials issues and controversies in strained layer epitaxy is presented in this new volume from MRS. Research involving GeSi alloys and alloys are well represented. In the case of GeSi alloys, utilizing both strained and relaxed structures appears to be a strong component of the current research. Applications, devices and synthesis of improved relaxed and strained materials are featured. Special efforts to integrate the III-V and IV communities were also made during this symposium, and those efforts are reflected in the proceedings volume as well. Results on compositional graded layers in both the GeSi and III-V materials systems are presented. Topics general issues; ordering/low dimensional structures; characterization; device applications; growth of Si-based materials; and growth of compound semiconductors.

521 pages, Hardcover

First published November 9, 1995